Silicon epitaxial planar type
PIN Diodes
MA3X557
Silicon epitaxial planar type
Unit : mm
For UHF and SHF bands AGC
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1....
Description
PIN Diodes
MA3X557
Silicon epitaxial planar type
Unit : mm
For UHF and SHF bands AGC
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
0.95
2.9 − 0.05
Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
1.9 ± 0.2
+ 0.2
1 3 2
0.95
1.45
I Features
+ 0.2 − 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature* Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Mini Type Package (3-pin)
Marking Symbol: M30 Internal Connection
1 3 2
Note) * : Maximum ambient temperature during operation
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω
Note) 1 Rated input/output frequency: 100 MHz 2. Each characteristic is a standard for individual diode 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.1 to 0.3 0.4 ± 0.2
1.1
0.8
0.16 − 0.06
+ 0.1
0.4 − 0.05
+ 0.1
1
MA3X557
IF V F
Ta = ...
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