MA3X557

PIN Diodes MA3X557 Silicon epitaxial planar type Unit : mm For UHF and SHF bands AGC 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.95 2.9 − 0.05 Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 1.9 ± 0.2 + 0.2 1 3 2 0.95 1.45 I Features + 0.2 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature* Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Mini Type Package (3-pin) Marking Symbol: M30 Internal Connection 1 3 2 Note) * : Maximum ambient temperature during operation I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2. Each characteristic is a standard for individual diode 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 1.1 0.8 0.16 − 0.06 + 0.1 0.4 − 0.05 + 0.1 1 MA3X557 IF  V F Ta = ...