MA3X704D

Schottky Barrier Diodes (SBD) MA3X704D, MA3X704E Silicon epitaxial planar type For switching circuits For wave detection circuit I Features Two MA3X704As are contained in one package Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) Small tmperature coefficient of forward characteristic Extremely low reverse current IR 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 Parameter Reverse voltage (DC) Peak forward current Forward current (DC) MA3X704D/E Single Double* Single Double* Symbol VR IFM IF Tj Tstg Rating 30 150 110 30 20 125 −55 to +125 Unit V mA MA3X704D MA3X704E JEDEC : TO-236 1 Cathode Anode EIAJ : SC-59 2 Cathode Anode Mini Type Package (3pin) 3 Anode Cathode mA °C °C Marking Symbol MA3X704D : M2P MA3X704E : M2R Internal Connection 1 3 2 2 1 3 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Conditions D Min Typ 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C 0.1 to 0.3 0.4 ± 0.2 1.1 0.8 E Max 1 0.4 1.0 1.5 1.0 Unit µA V V pF ns Detection efficiency 65 0.16 − 0.06 + 0.2 − 0.1 + 0.1 0.4 − 0.05 + 0.1 % Note) 1. Schot...