MA3X715

Schottky Barrier Diodes (SBD) MA3X715 (MA715) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.50+0.25 –0.05 ■ Features Low forward voltage VF Optimum for high frequency rectification because of its short reverse recovery time trr 1 3 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 10˚ 1.1+0.2 –0.1 (0.65) 0 to 0.1 1.1+0.3 –0.1 EIAJ: SC-59 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package Marking Symbol: M2Y Internal Connection 3 Junction temperature Storage temperature 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time Detection efficiency * Conditions IF = 1 mA IF = 30 mA VR = 30 V VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Min Typ Max 0.3 1.0 30 Unit V µA pF ns % IR Ct trr η 1.5 1.0 65 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the o...