MA3X716

Schottky Barrier Diodes (SBD) MA3X716 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features Two MA3X704As are contained in one package (series connection) Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 + 0.2 Unit : mm 0.65 ± 0.15 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.1 0.1 to 0.3 0.4 ± 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Junction temperature Storage temperature Single Series Single Series Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA 0.8 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M1U Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit µA V V pF ns Detection efficiency 65 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attentio...