MA3X727

Schottky Barrier Diodes (SBD) MA3X727 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Sealed in the Mini type mold. High breakdown voltage type (VR = 50 V) Allowing to rectify under (IF(AV) = 200 mA) condition High reliability 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 200 1 150 −55 to +150 Unit V V mA mA A °C °C 0.1 to 0.3 0.4 ± 0.2 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M1Z Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3.0 Conditions Min Typ Max 200 0.36 0.55 Unit µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage o...