MA3X730

Schottky Barrier Diodes (SBD) MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 Two MA2X707s are contained in the (Mini (3-pin) type) Large conversion gain (GC) Small forward voltage VF Optimum for the UHF band mixer 1.9 ± 0.2 2.9 − 0.05 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Forward voltage (DC) Reverse voltage (DC) Junction temperature Storage temperature Symbol VF VR Tj Tstg Rating 0.5 5 125 −55 to +125 Unit V V °C °C 1.1 − 0.1 0.1 to 0.3 0.4 ± 0.2 Marking Symbol: M2X Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Forward current (DC) Reverse current (DC) Forward voltage (DC) Reverse breakdown voltage (DC) Terminal capacitance Conversion gain*1,2 Symbol IF IR VF V(BR)R Ct GC VF = 0.5 V VR = 5 V IF = 2 mA IR = 1 mA VR = 0.5 V, f = 1 MHz RF = 890 MHz, LO = 935 MHz IF = 45 MHz C = 100 pF, Breakdown judgment point IR ≥ 35 µA 5 0.65 −7 100 0.85 −5 200 1.05 0.25 Conditions Min 35 Typ Max 100 35 Unit mA µA V V pF dB Static breakdown strength 0.8 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Ra...