MA3X740

Schottky Barrier Diodes (SBD) MA3X740 Silicon epitaxial planar type For super high speed switching circuit For small current rectification Two MA3X721s are contained in one package (series connection) Allowing to rectify under (IF(AV) = 200 mA) condition (single diode value) 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 Unit : mm 0.65 ± 0.15 0.95 1.9 ± 0.2 I Features 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Single Double*1 Single Double*1 VR VRRM IF(AV) IFM IFSM Tj Tstg 30 30 200 130 300 220 1 0.7 150 −55 to +150 V V mA 0.1 to 0.3 0.4 ± 0.2 mA Single Non-repetitive peak forward surge current*2 Double*1 Junction temperature Storage temperature A °C °C Marking Symbol: M3C Internal Connection 1 3 2 Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3 Conditions Min Typ Max 50 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrum...