Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super-high speed switching circuit For small cu...
Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
Two MA3X786s are contained in one package (series connection) Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency
2.9 − 0.05
+ 0.2
2.8 − 0.3 0.65 ± 0.15
+ 0.2
Unit : mm
0.65 ± 0.15
1.5 − 0.05
+ 0.25
0.95
1.9 ± 0.2
1 3 2
0.95
1.45 0 to 0.1
1.1 − 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Series*2 Single Series*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA
0.1 to 0.3 0.4 ± 0.2
Marking Symbol: M4A Internal Connection
1
Non-repetitive peak forward surge current*1 Junction temperature Storage temperature
°C °C
2
0.8
1 : Anode 1 2 : Cathode 2 JEDEC : TO-236 3 : Cathode 1 EIAJ : SC-59 Anode 2 Mini Type Package (3-pin)
3
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 1...
