Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65 ± ...
Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
2
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
VR VRRM IF(AV) IFSM Tj Tstg
20 25 1.0 3 125 −55 to + 125
V V A A °C °C
1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin)
Marking Symbol: M6K Internal Connection
Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
1 3 2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.0 A VR = 0 V, f = 1 MHz 180 Conditions Min Typ Max 200 0.45 Unit µA V pF
Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz
0 to 0.1
0.1 to 0.3 0.4 ± 0.2
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.1
0.16 − 0.06
+ 0.2
+ 0.1
I Absolute Maximum Ratings Ta = 25°C
0.4 − 0.05
+ 0.1
Sealed in the Mini type 3-pin package Allowing to rectify under (IF(AV) = 1 A) condition Low forward rise voltage VF
0.95
1.9 ± 0.2
2.9 − 0.05
1
+ 0.2
0.95
3
1.45
I Features
1
MA3XD11
IF V F
10 Ta = 125°C 1
1....