MA3XD14E

Schottky Barrier Diodes (SBD) MA3XD14E Silicon epitaxial planar type (cathode common) Unit : mm For high-speed switching circuits I Features Mini type 3-pin package Low forward rise voltage VF (VF < 0.4 V) Cathode common type 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*2 Forward current (DC) Peak forward current Single Double*1 Single Double*1 Tj Tstg IFM Symbol VR VRRM IFSM IF Rating 20 20 1 100 70 300 200 125 −55 to +125 °C °C 1 mA Unit 0.8 V V A mA 1 : Anode 1 2 : Anode 2 3 : Cathode 1 Cathode 2 Mini Type Package (3-pin) Marking Symbol: M5H Internal Connection Junction temperature Storage temperature Note) *1 : The value for operating one chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 1.1 − 0.1 3 2 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of curre...