MA3XD17

Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against reverse current I Features Mini type 3-pin package High breakdown voltage VR = 100 V 2.8 0.65 ± 0.15 + 0.2 − 0.3 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.95 2.9 − 0.05 1.9 ± 0.2 1 3 2 + 0.2 0.95 1.45 + 0.2 − 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current* Average forward current Junction temperature Storage temperature Symbol VR VRM IFSM IF(AV) Tj Tstg Rating 100 100 1.5 300 125 −55 to +150 Unit V V A mA °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M5K Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 100 V IF = 300 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 0.50 100 7 Conditions Min Typ Max 200 0.58 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 1. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR P...