MA3Z070

Band Switching Diodes MA3Z070 Silicon epitaxial planar type Unit : mm For a band selection switch of an electronic tuner 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 0.65 2.0 ± 0.2 0.9 ± 0.1 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.7 ± 0.1 0.2 ± 0.1 1 : Anode 1 2 : Cathode 2 3 : Anode 2 Cathode 1 EIAL : SC-70 S-Mini Type Package (3-pin) Note) * : Maximum ambient temperature during operation Marking Symbol: M3S Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω Note) 1 Each characteristic is a standard for individual diodes 2 Rated input/output frequency: 100 MHz 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 − 0.05 + 0.1 Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.3 ± 0.1 I Features 1 0.65 3 2 0.2 0.3 − 0 + 0.1 1 MA3Z070 IF  V F 103 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 102 VR = 33 V 5 3 2 Reverse c...