Document
Band Switching Diodes
MA3Z080D, MA3Z080E
Silicon epitaxial planar type
Unit : mm
For band switching
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
+ 0.1
• Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C
0.9 ± 0.1
1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin)
Storage temperature
Note) * : Maximum ambient temperature during operation
Marking Symbol • MA3Z080D : M1X • MA3Z080E : M1Y Internal Connection
1 3 2 D
1 3 2
E
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1.0 1.2 0.85 Unit nA V pF Ω
Note) 1 Each characteristic is a standard for individual diodes 2 Rated input/output frequency: 100 MHz 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 − 0.05
+ 0.1
0.3 − 0
I Features
1
MA3Z080D, MA3Z080E
IF V F
1 000 Ta = 25°C
10
Band Switching Diodes
CD VR
f = 1 MHz Ta = 25°C
IR T a
100 VR = 33 V
5 3 2
10
1
Reverse current IR (nA)
0 4 8 12 16 20 24 28 32 36 40
100
Diode capacitance CD (pF)
Forward current IF (mA)
10
1
0.5 0.3 0.2
1
0.1
0.1
0.1
0
0.2
0.4
0.6
0.8
1.0
0.01
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
rf IF
1.0 f = 100 MHz Ta = 25°C
rf f
1.0 IF = 2 mA Ta = 25°C
Forward dynamic resistance rf (Ω)
0.8
Forward dynamic resistance rf (Ω)
1 3 10 30 100
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0 10
30
100
300
1 000
Forward current IF
(mA)
Frequency f (MHz)
2
.