Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
FEATURES
• Repetitiv...
Philips Semiconductors
Product specification
PowerMOS
transistors FREDFET, Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance Fast reverse recovery diode
PHP6ND50E, PHB6ND50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A
g
RDS(ON) ≤ 1.5 Ω
s
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB6ND50E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain 1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 500 500 ± 30 5.9 3.7 24 125 150 UNIT V V V A A A W ˚C
August 1998
1...