MA4S713

Schottky Barrier Diodes (SBD) MA4S713 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features Small S-mini type 4-pin package Two isolated elements contained in one package, allowing highdensity mounting Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 ± 0.1 1.3 ± 0.1 Unit : mm 2.1 ± 0.1 1.25 ± 0.1 1 4 2 3 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 −55 to +125 °C °C 2 mA 1 Unit V V mA 0.7 ± 0.1 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1N Internal Connection 4 3 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 Conditions Min Typ Max 1 0.4 1 Unit µA V V pF ns Detection efficiency 65 0.3 ± 0.05 % Note) 1. Schottky barrier di...