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PHB8N50E

NXP

Transistor


Description
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHP8N50E, PHB8N50E, PHW8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DE...



NXP

PHB8N50E

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