Document
Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
For switching For wave detection I Features
• Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) • Low forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Mini type 4-pin package
2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.1 –0.06
0.5R
2 (0.2) 0.60+0.10 –0.05 10°
1
(0.65)
5°
+0.2 0 to 0.1 1.1–0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) *: Value per chip
*
Symbol VR IFM IF Tj Tstg
Rating 30 150 110 30 20 125 −55 to +125
Unit V mA
Marking Symbol: M1N Internal Connection
3 4
mA °C °C
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
2
1
Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF
Min
Typ
1.1+0.3 –0.1
1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package
Max 1 0.4 1.0
Unit µA V
Ct trr η
1.5 1.0 65
pF ns %
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00103AED
0.4±0.2
Publication date: August 2001
1
MA4X713
Characteristics charts between pins 1 and 4, 2 and 3 IF V F
103 103
IR V R
1.0
VF Ta
102
75°C 25°C Ta = 125°C −20°C
102
Forward current IF (mA)
Ta = 125°C
0.8
Forward voltage VF (V)
Reverse current IR (µA)
10
10
75°C
0.6
IF = 30 mA
1
1 25°C 10−1
0.4 3 mA 0.2 1 mA
10−1
10−2
0
0.2
0.4
0.6
0.8
1.0
1.2
10−2
0
5
10
15
20
25
30
0 −40
0
40
80
120
160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR T a
103
3
Ct VR
f = 1 MHz Ta = 25°C
Terminal capacitance Ct (pF)
102
Reverse current IR (µA)
VR = 30 V 15 V
2
10
1
1
10−1
10−2 −40
0
0
40
80
120
160
200
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
SKH00103AED
Request for your special attention and precautions in using the technical information and semiconductors described in this mat.