Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
For switching For wave detection I Features...
Schottky Barrier Diodes (SBD)
MA4X713 (MA713)
Silicon epitaxial planar type
For switching For wave detection I Features
Two isolated elements are contained in one package, allowing high-density mounting Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 4-pin package
2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.1 –0.06
0.5R
2 (0.2) 0.60+0.10 –0.05 10°
1
(0.65)
5°
+0.2 0 to 0.1 1.1–0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) *: Value per chip
*
Symbol VR IFM IF Tj Tstg
Rating 30 150 110 30 20 125 −55 to +125
Unit V mA
Marking Symbol: M1N Internal Connection
3 4
mA °C °C
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
2
1
Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF
Min
Typ
1.1+0.3 –0.1
1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package
Max 1 0.4 1.0
Unit µA V
Ct trr η
1.5 1.0 65
pF ns %
Note) 1. This...