MA5114

MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Operation Mode Read Write Standby CS L L H WE H L X I/O D OUT D IN High Z ISB2 Power ISB1 FEATURES s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 50µA Typical s -55°C to +125°C Operation s All Inputs and Outputs Fully TTL or CMOS Compatible s Fully Static Operation s Data Retention at 2V Supply Figure 1: Truth Table Figure 2: Block Diagram 1/12 MA5114 CHARACTERISTICS AND RATINGS Symbol VCC VI TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. -0.5 -0.3 -55 -65 Max. 7 VDD+0.3 125 150 Units V V °C °C Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maxlmum rating conditions for extended perlo...