MA6X129

Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type For small power current rectification 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit : mm 0.16+0.10 –0.06 0.30+0.10 –0.05 0.50+0.10 –0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Single Triple Repetitive peak forward current Single Triple IFSM Tj Tstg IFRM Symbol VR VRM IO Rating 200 200 100 200 200 600 350 1 000 150 −55 to +150 °C °C mA mA Unit V V mA 10° 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Cathode 1 4: Anode 1 2: Cathode 2 5: Anode 2 3: Cathode 3 6: Anode 3 Mini6-G1 Package Marking Symbol: M4F Internal Connection 6 5 4 1 2 3 Single Non-repetitive peak forward surge current* Triple Junction temperature Storage temperature Note) * : t = l s I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 200 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 0.2 1.2 Unit µA V pF Note) Rated input/output frequency: 3 MHz Note) The part number in the parenthesis shows conventional part number. 0 to 0.1 (0.65) Three isolated elements contained in one package, allowing highdensity mounting Allowing high voltage rectification 3 2 1 223 0.4±0.2 I Features 5° MA6X129 IF  VF 1 000 100°C 25°C 100 1.6 1.4 Rectifier Diodes VF  Ta 100 Ta = 150°C 10 IR  V R Forward current IF (mA) Forward voltage VF (V) Ta = 150°C 10 − 20°C 1.2 1...