MA714

Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit Two MA3X704As are contained in one package (Two diodes in a different direction) Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 1.9 ± 0.2 0.95 + 0.2 0.95 0.5 I Features 0.5 R 4 1 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA 0.4 ± 0.2 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1P Internal Connection 4 3 1 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit µA V V pF ns Detection efficiency 65 0 to 0.1 0.1 to 0.3 0.8 0.16 − 0.06 + 0.1 0.6 − 0 + 0.1 0.4 − 0.05 1.45 + 0.1 % Note) 1. Schottky barr...