MA718

Schottky Barrier Diodes (SBD) MA6X718 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit I Features Three MA3X704As in the same direction are contained in one package Optimum for low-voltage rectification because of its low forward rise voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.8 0.65 ± 0.15 6 1.9 ± 0.1 0.95 0.95 + 0.2 − 0.3 + 0.25 1.5 − 0.05 1 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + 0.1 2.9 − 0.05 + 0.2 5 2 4 3 1.1 − 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current* Symbol VR IFM IF Tj Tstg Rating 30 150 30 125 −55 to +125 Unit V mA mA °C °C 1 : Cathode 1 4 : Anode 3 2 : Cathode 2 5 : Anode 2 3 : Cathode 3 6 : Anode 1 Mini Type Package (6-pin) Forward current (DC)* Junction temperature Storage temperature Note) * : Value in per diode Marking Symbol: M2N Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit µA V V pF ns Detection efficiency 65 0 to 0.05 0.1 to 0.3 0.4 ± 0.2 0.8 0.16 − 0.06 + 0.2 0.5 − 0.05 + 0.1 + 0.1 % Note) 1. Schottky barrier diode is sensitive to electric sho...