MA732

Schottky Barrier Diodes (SBD) MA2J732 (MA732) Silicon epitaxial planar type Unit: mm For switching For wave detection I Features Low forward voltage VF, optimum for low voltage rectification Low VF type of MA3X704A (MA704A) Optimum for high frequency rectification because of its short reverse recovery time (trr) S-Mini type 2-pin package 1.25±0.1 0.35±0.1 0.7±0.1 1 0 to 0.1 1.7±0.1 0.16+0.1 –0.06 5° 0 to 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage temperature Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 30 125 −55 to +125 Unit V V mA mA °C °C 1 : Anode 2 : Cathode EIAJ : SC-90A SMini2-F1 Package Marking Symbol: 2C I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 65 Conditions Min Typ Max 30 0.3 1.0 pF ns % Unit µA V Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pul...