MA78

Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type For band switching 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit : mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 Non connected three elements incorporated in one package Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 10° 1.1+0.2 –0.1 (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 1 : Cathode 1 4 : Anode 3 2 : Cathode 2 5 : Anode 2 3 : Cathode 3 6 : Anode 1 Mini6-G1 Package Note) * : Maximum ambient temperature during operation Marking Symbol: M2L Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1 1.2 0.85 Unit nA V pF Ω Note) 1. Each characteristic is a standard for individual diodes 2. Rated input/output frequency: 100 MHz 3. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. 0 to 0.1 1.1+0.3 –0.1 ...