PHC21025

SO8 PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ Motor and actuator drivers „ Power management „ Synchronized rectification 1.4 Quick reference data Table 1. Symbol VDS Quick reference data Parameter drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel Tsp ≤ 80 °C; P-channel Tsp ≤ 80 °C; N-channel Tamb = 25 °C Min - - [1] - VGS = -10 V; ID = -1 A; Tj = 25 °C; P-channel; see Figure 16; see Figure 19 VGS = 10 V; ID = 2.2 A; Tj = 25 °C; N-channel; see Figure 15; see Figure 18 - Typ Max Unit - 30 V - -30 V - -2.3 A - 3.5 A - 1W 0.22 0.25 Ω 0.08 0.1 Ω NXP Semiconductors PHC21025 Complementary intermediate level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = -10 V; ID = -2.3 A; VDS...