MA792

Schottky Barrier Diodes (SBD) MA3Z792 (MA792) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 3 0.3+0.1 –0 0.15+0.1 –0.05 High-density mounting is possible IF(AV) = 100 mA rectification is possible Optimum for high frequency rectification because of its short reverse recovery time (trr) Low forward voltage VF and good rectification efficiency S-Mini type 3-pin package 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 100 1 125 −55 to +125 Unit V V mA mA A 1 : Anode 2 : N.C. 3 : Cathode SMini3-F1 Package Marking Symbol: M3T Internal Connection 3 °C °C 1 2 Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2.0 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2....