MA795WK

Schottky Barrier Diodes (SBD) MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type 0.80±0.05 For switching I Features High-density mounting is possible Low forward voltage VF , optimum for low voltage rectification: VF < 0.3 V (at IF = 1 mA) Optimum for high frequency rectification because of its short reverse recovery time (trr) SS-Mini type 3-pin package 0.28±0.05 Unit: mm 0.12+0.05 –0.02 (0.44) 3° (0.44) 3 1 2 3 1.60±0.05 (0.80) 1 2 (0.51) (0.80) (0.80) 1.60+0.05 –0.03 3° 0.28±0.05 (0.51) 0.60+0.05 –0.03 0 to 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Series Double * Forward current (DC) Series Double * Junction temperature Storage temperature Note) *: Value per chip Symbol VR VRM IFM IF Tj Tstg Rating 30 30 150 110 30 20 125 −55 to +125 Unit V V mA EIAJ : SC-89 SSMini3-F2 Package MA3S795D MA3S795E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode1, 2 Cathode 1, 2 mA °C °C Marking Symbol MA3S795D: M3D MA3S795E: M3D Internal Connection 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * 1 2 D Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1 65 Min Typ E Max 30 0.3 1 pF ns % Unit µA V Ct trr η Note) 1. This product is sensitive to electric shock (static electricit...