PHD20N06T

PHD20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 M3D300 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 (D-PAK). 2. Features s TrenchMOS™ technology s Low on-state resistance s Fast switching. 3. Applications s Switched mode power supplies s DC to DC converters s General purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb Simplified outline Symbol drain (d) source (s) drain (d) 2 1 Top view 3 MBK091 MBB076 d g s SOT428 (D-PAK) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PHD20N06T N-channel TrenchMOS™ transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 10 A Tj = 25 °C Tj = 175 °C 65 − 77 154 Typ − − − − Max 55 18 51 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation ...