MA7D49

Schottky Barrier Diodes (SBD) MA3D749 (MA7D49), MA3D749A (MA7D49A) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 Low forward voltage VF High dielectric breakdown voltage: > 5 kV Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 e ) Repetitive peak MA3D749 VRRM 40 V c type reverse voltage MA3D749A 45 n d tage. ued Forward current (Average) IF(AV) 5 A le s ntin Non-repetitive peak forward IFSM 90 A a e c co surge current * lifecy , dis Junction temperature n u duct typed Storage temperature Tj −40 to +125 °C Tstg −40 to +125 °C te tin Pro ued Note) *: Half sine wave; 10 ms/cycle 5.08±0.50 123 1: Anode 2: Cathode (Common) 3: Anode TO-220D-A1 Package in n followinngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 2°C a o ludes e, pla Parameter Symbol Conditions Min Typ Max Unit inc typ Forward voltage c ued nce Reverse current MA3D749 M is ntin tena MA3D749A /Disco main Thermal resistance (j-c) VF IR Rth(j-c) IF = 2.5 A, TC = 25°C VR = 40 V, TC = 25°C VR = 45 V, TC = 25°C 0.55 V 1.0 mA 1.0 3.0 °C/W D ance type, Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. ten ce 2. This product is sensitive to electr...