MA7D52A

Schottky Barrier Diodes (SBD) MA3D752 (MA7D52), MA3D752A (MA7D52A) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 Low forward voltage VF High dielectric breakdown voltage: > 5 kV Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 e ) Repetitive peak MA3D752 VRRM 40 V c type reverse voltage MA3D752A 45 n d tage. ued Non-repetitive peak MA3D752 VRSM 40 V le s ntin forward surge voltage a e cyc isco Forward current (Average) IF(AV) 20 A life d, d Non-repetitive peak forward IFSM 120 A n u duct type surge current * te tin Pro ed Junction temperature four ntinu Storage temperature Tj −40 to +125 °C Tstg −40 to +125 °C ing isco Note) *: Half sine wave; 10 ms/cycle 5.08±0.50 123 1: Anode 2: Cathode (Common) 3: Anode TO-220D-A1 Package ain onincludestyfpoell,opwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C c tinued ance Parameter Symbol Conditions Min Typ Max Unit M is con inten Forward voltage /Dis ma Reverse current MA3D752 D ance type, MA3D752A ten ce Thermal resistance (j-c) VF IR Rth(j-c) IF = 10 A, TC = 25°C VR = 40 V, TC = 25°C VR = 45 V, TC = 25°C 0.55 V 5 mA 5 3.0 °C/W Main tenan Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 70...