Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP23NQ10T, PHB23NQ10T PHD23NQ10T
QUICK ...
Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP23NQ10T, PHB23NQ10T PHD23NQ10T
QUICK REFERENCE DATA
d
FEATURES
’Trench’ technology Low on-state resistance Fast switching Low thermal resistance
SYMBOL
VDSS = 100 V ID = 23 A
g
RDS(ON) ≤ 70 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology. Applications: d.c. to d.c. converters switched mode power supplies T.V. and computer monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD23NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain 1 source
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
SOT428 (DPAK)
tab
2
1 23
2
1
3
1
3
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 ± 20 23 16 92 100 175 UNIT V V V A A A W ˚C
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packag...