MAAM26100-B1

MAAM26100-B1 GaAs MMIC Power Amplifier 2.0 - 6.0 GHz Features  Saturated Power: 30.5 dBm Typical  Gain: 19 dB Typical  Power Added Efficiency: 30%  DC Decoupled RF Input and Output  Lead-Free 7-Lead Ceramic Package  RoHS* Compliant and 260°C Reflow Compatible Description The MAAM26100-B1 is a GaAs MMIC two stage high efficiency power amplifier in a small, lead-free, 7-leadceramic package. The MAAM26100-B1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100-B1 is ideally suited for driver amplifiers and transmitter outputs in UMTS applications, test equipment, electronic warfare jammers, missile subsystems and phased array radars. The MAAM26100-B1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD VGG RF Input Power +9 V -6 V to -3 V +17 dBm Channel Temperature 150°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A-COM Tech does not recommend sustained operation near these survivability limits. Functional Diagram 3,4 VDD 1000 pF 1000 pF 654 3 Rev. V7 7 RF IN 2 RF OUT 1 VGG 3. Nominal bias is obtained by first connecting –5 volts to pin 1 (VGG), followed by connecting +8 volts to pin 5 (VD1) and pin 4 (VD2). Note sequenc...