MAAM26100-P1

Preliminary Specifications GaAs MMIC Power Amplifier 2 - 6 GHz Features q q q q q q MAAM26100-P1 V1.A CR-15 -C.085 +30 dBm Saturated Output Power 18 dB Typical Gain 30% Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output High Performance Ceramic Bolt Down Package .70 .530 4X .06 X 45° CHAMFER 10X .050 MIN 10 9 8 7 6 .159 -B- .328 ±.010 .318 ±.010 Description M/A-COM’s MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars. M/A-COM’s MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. 2X .010 SQ. ORIENTATION TAB .115 ±.010 4X .050 .33 Ø .096 THRU 1 2 3 4 5 10X .010 ±.003 4X .100 Ø .004 M A B C .005 ±.002 -A.020 CERAMIC .040 BASE PLATE .090 MAX Notes: (unless otherwise specified) 1. Dimensions are inches. 2. Tolerance: in .xxx = ±.010 Ordering Information Part Number MAAM26100-P1 Package Ceramic Bolt Down Typical Electrical Specifications, TA = +25°C , VDD = +8 V, VGG = -5 V Parameter Small Signal Gain Input VSWR Output VSWR Output Power Power Added Ef...