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MAC08MT1 Dataheets PDF



Part Number MAC08MT1
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC08MT1 DatasheetMAC08MT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ223 Triac Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. • • • • • Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MAC08BT1 Series * *Moto.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ223 Triac Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. • • • • • Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MAC08BT1 Series * *Motorola preferred devices TRIAC 0.8 AMPERE RMS 200 thru 600 Volts CASE 318E-04 (SOT-223) STYLE 11 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Blocking Voltage(1) (1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) MAC08BT1 MAC08DT1 MAC08MT1 On-State Current RMS (TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (t < 2.0 µs) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM 200 400 600 0.8 10 0.4 5.0 0.1 –40 to +110 –40 to +150 260 Amps Amps A2s Watts Watts °C °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Symbol RθJA RθJT Max 156 25 Unit °C/W °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 3–40 Motorola Thyristor Device Data MAC08BT1 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak Repetitive Blocking Current (VD = Rated VDRM Gate Open) TJ = 25°C TJ = 110°C Maximum On-State Voltage (Either Direction) (IT = 1.1 A Peak, TA = 25°C) Gate Trigger Current (Continuous dc) All Quadrants (VD = 7.0 Vdc, RL = 100 Ω) Holding Current (Either Direction) (VD = 7.0 Vdc, Gate Open, Initiating Current = 20 mA, Gate Open) Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 7.0 Vdc, RL = 100 Ω) Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On-State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 Ω, See Figure 10) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) Symbol IDRM — — VTM IGT IH — — — — — — — — 10 200 1.9 10 5.0 Min Typ Max Unit µA µA Volts mA mA VGT dv/dtc — 1.5 — — 2.0 — Volts V/µs dv/dt 10 — — V/µs 0.15 3.8 0.079 2.0 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 ǒinchesǓ mm 0.091 2.3 0.244 6.2 0.984 25.0 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.096 2.44 0.059 1.5 0.096 2.44 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 Motorola Thyristor Device Data 3–41 MAC08BT1 Series IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 Rθ JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ° C/W 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 1.0 4 1 2 3 L 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5.0 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 4.0 6.0 FOIL AREA (cm2) 8.0 10 Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 α 110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) 90 80 70 60 50 40 30 20 0 0.4 0.1 0.2 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.5 MINIMUM FOOTPRINT 50 OR 60 Hz dc α = 180° 120° 60° 90° T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) 30° α α = CONDUCTION ANGLE 100 90 80 70 60 50 40 30 20 0 0.1 0.2 1.0 cm2 FOIL AREA 50 OR 60 Hz dc α = 180° 120° 30° 60° 90° α α α = CONDUCTION ANGLE 0.6 0.3 0.4 0.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 110 α Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE (° C) 30° dc 60° α = 180° T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) 100 90 80 70 4.0 cm2 FOIL AREA 60 50 dc α = 180° 120° 30° 60° 90° α α = CONDUCTION ANGLE 105 100 95 90 85 80 REFERENCE: FIGURE 1 α α = CONDUCTION ANGLE 120° α 90° 0 0.1 0.6 0.7 0.3 0.4 0.5 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.2 0.8 0 0.1 0.3 0.4 0.5 0.6 IT(RMS), ON-STATE CURRENT (AMPS) 0.2 0.7 0.8 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current .


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