Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package • High Surge Current Capability — 120 Amperes
*Motorola preferred devices
MAC12 SERIES *
TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
MT2
MT1 MT2 G
CASE 221A–06 (TO-220AB) Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 12 100 41 16 0.35 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Value Unit Volts
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds RθJC RθJA TL 2.2 62.5 260 °C/W °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ =1 25°C IDRM — — — — 0.01 2.0 mA
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
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Motorola Thyristor Device Data
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MAC12 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = ±17 A) Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VTM IGT 5.0 5.0 5.0 IH IL — — VGT 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 20 30 50 80 Volts — 13 16 18 20 35 35 35 40 mA mA — — 1.85 Volts mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current* (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dv/dt)c 6.5 — — A/ms
dv/dt
250
—
—
V/µs
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Motorola Thyristor Device Data
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