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MAC12D Dataheets PDF



Part Number MAC12D
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC12D DatasheetMAC12D Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TRIACS Silicon Bidirectional Thyristors Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TRIACS Silicon Bidirectional Thyristors Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package • High Surge Current Capability — 120 Amperes *Motorola preferred devices MAC12 SERIES * TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MT2 G CASE 221A–06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12D MAC12M MAC12N IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg Symbol VDRM 400 600 800 12 100 41 16 0.35 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Value Unit Volts On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds RθJC RθJA TL 2.2 62.5 260 °C/W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ =1 25°C IDRM — — — — 0.01 2.0 mA (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3–53 MAC12 SERIES ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Peak On-State Voltage* (ITM = ±17 A) Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) VTM IGT 5.0 5.0 5.0 IH IL — — VGT 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 20 30 50 80 Volts — 13 16 18 20 35 35 35 40 mA mA — — 1.85 Volts mA DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current* (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dv/dt)c 6.5 — — A/ms dv/dt 250 — — V/µs 3–54 Motorola Thyristor Device Data .


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