MAC16N

MOTOROLA SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices MAC16 SERIES* TRIACS Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of 15 Amperes RMS at 80°C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt — 500 V/µs minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating di/dt — 9.0 A/ms minimum at 125°C TRIACS 15 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol VDRM Parameter Peak Repetitive Off-State Voltage, (1) (– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D MAC16M MAC16N Value 400 600 800 15 150 93 20 0.5 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Unit Volts IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg On-State RMS Current (60 Hz, TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS RθJC RθJA TL Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 2.0 62.5 ...