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MAC212-10FP Dataheets PDF



Part Number MAC212-10FP
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC212-10FP DatasheetMAC212-10FP Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC212FP/D Triacs MAC212FP Series MAC212AFP Series ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC212FP/D Triacs MAC212FP Series MAC212AFP Series ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or Four Modes (MAC212AFP Series) MT2 G MT1 CASE 221C-02 STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4FP, MAC212A4FP MAC212-6FP, MAC212A6FP MAC212-8FP, MAC212A8FP MAC212-10FP, MAC212A10FP On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 12 100 40 20 0.35 2 1500 –40 to +125 –40 to +150 Amps Amps A2s Watts Watt Amps Volts °C °C Value Unit Volts p 20%) IGM V(ISO) TJ Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RθJC RθCS RθJA Max 2.1 2.2 (typ) 60 Unit °C/W °C/W °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MAC212FP Series MAC212AFP Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) (ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(+), G(–); MT2(–), G(–) MT2(–), G(+) “A ” SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) Symbol IDRM — — — — 1.3 10 2 1.75 Min Typ Max Unit µA mA Volts mA p 2%) VTM IGT — — — — — VGT 12 12 20 35 50 50 50 75 Volts — — — — 0.2 0.2 IH — 0.9 0.9 1.1 1.4 — — 6 2 2 2 2.5 — — 50 mA tgt — 1.5 — µs dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) TYPICAL CHARACTERISTICS P D(AV), AVERAGE POWER DISSIPATION (WATT) 125 28 24 20 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) α α = CONDUCTION ANGLE α dc α = 180° 90° 60° 30° 115 α = 30° α α 85 α = CONDUCTION ANGLE 60° 90° 180° dc 105 95 75 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation 2 Motorola Thyristor Device Data MAC212FP Series MAC212AFP Series 100 50 20 10 5 TJ = 25°C TJ = 125°C 100 I TSM , PEAK SURGE CURRENT (AMP) i T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 80 60 CYCLE TC = 70°C f = 60 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 40 2 1 0.5 20 0 1 2 3 NUMBER OF CYCLES 5 7 10 0.2 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 0.1 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 Figure 4. Maximum Nonrepetitive Surge Current 4.4 2 OFF-STATE VOLTAGE = 12 Vdc ALL MODES vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On-State Characteristics.


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