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MAC212-8 Dataheets PDF



Part Number MAC212-8
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC212-8 DatasheetMAC212-8 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes (MAC212A Series) MAC212 Series MAC212A Series TRIACs 12 AMPERES RMS 200 thru 800 VOLTS MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4, MAC212A4 MAC212-6, MAC212A6 MAC212-8, MAC212A8 MAC212-10, MAC212A10 On-State Current RMS (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.35 2 –40 to +125 –40 to +150 Amp Amp A2s Watts Watt Amp °C °C Value Unit Volts 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 3–83 MAC212 Series MAC212A Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.1 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) Symbol IDRM — — — — 1.3 10 2 1.75 Min Typ Max Unit µA mA Volts mA — — — — VGT — — — — 0.2 0.2 IH — 0.9 0.9 1.1 1.4 — — 6 2 2 2 2.5 — — 50 mA 12 12 20 35 50 50 50 75 Volts p 2% VTM IGT — tgt — 1.5 — µs dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) FIGURE 1 — CURRENT DERATING PD(AV), AVERAGE POWER DISSIPATION (WATT) 125 28 24 20 16 12 8.0 4.0 0 0 FIGURE 2 — POWER DISSIPATION 115 α = 30° α α 85 α = CONDUCTION ANGLE 60° 90° 180° dc α α α = CONDUCTION ANGLE dc α = 180° 90° 60° 30° 105 95 75 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) 3–84 Motorola Thyristor Device Data MAC212 Series MAC212A Series FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS 100 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50 20 10 5.0 TJ = 25°C TJ = 125°C FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT 100 ITSM , PEAK SURGE CURRENT (AMP) 80 60 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 NUMBER OF CYCLES 5.0 7.0 10 40 20 0 1.0 2.0 1.0 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) FIGURE 6 — TYPICAL GATE TRIGGER CURRENT I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 IH , HOLDING CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 –60 FIGURE 7 — TYPICAL HOLDING CURRENT 1.6 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 –40 –20 0 20 40 60 80 TC, CASE T.


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