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MAC218-8FP Dataheets PDF



Part Number MAC218-8FP
Manufacturers Motorola
Logo Motorola
Description Triac
Datasheet MAC218-8FP DatasheetMAC218-8FP Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC218FP/D Triacs • • • • MAC218FP Series MAC218AFP Series ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 800 Volts Glass Passivated Junctions for Greater Parameter Uniformity and Stability Isolated TO-220 Type Package for Ease .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC218FP/D Triacs • • • • MAC218FP Series MAC218AFP Series ISOLATED TRIACs THYRISTORS 8 AMPERES RMS 200 thru 800 VOLTS Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 800 Volts Glass Passivated Junctions for Greater Parameter Uniformity and Stability Isolated TO-220 Type Package for Ease of Mounting Gate Triggering in Three Modes (MAC218FP Series) or Four Modes (MAC218AFP Series) MT2 G CASE 221C-02 STYLE 3 MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C) (1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC218-4FP, MAC218A4FP MAC218-6FP, MAC218A6FP MAC218-8FP, MAC218A8FP MAC218-10FP, MAC218A10FP On-State RMS Current (TC = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, preceded and followed by rated current, TC = 80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width = 1 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) 8 100 40 16 0.35 4 1500 –40 to +125 –40 to +150 Amps Amps A2s Watts Watt Amps Volts °C °C Value Unit Volts p 20%) IGM V(ISO) TJ Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RθJC RθCS RθJA Max 2.2 2.2 (typ) 60 Unit °C/W °C/W °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MAC218FP Series MAC218AFP Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Off-State Current (Either Direction) (VD = Rated VDRM @ TJ = 125°C, Gate Open ) Peak On-State Voltage (Either Direction) (ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Symbol IDRM Min — — Typ — 1.7 Max 2 2 Unit mA Volts mA — — — — VGT — — — — 0.2 0.2 IH dv/dt(c) — — 0.9 0.9 1.1 1.4 — — — 5 2 2 2 2.5 — — 50 — mA V/µs — — — — 50 50 50 75 Volts t 2%) VTM IGT Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ω) Trigger Mode MT2(+), G(+) ; MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY Holding Current (Either Direction) (VD = 24 Vdc, Gate Open, Initiating Current = 200 mA) Critical Rate of Rise of Commutating Off-State Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TJ = 125°C) dv/dt — 100 — V/µs TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) P D(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 10 115 8 105 6 95 4 85 75 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 0 0 1 2 3 4 5 6 7 8 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. Current Derating Figure 2. Power Dissipation 2 Motorola Thyristor Device Data MAC218FP Series MAC218AFP Series TYPICAL CHARACTERISTICS VGT , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS) IGT, NORMALIZED GATE TRIGGER CURRENT (mA) 5 OFF-STATE VOLTAGE = 12 V 3 2 1.8 OFF-STATE VOLTAGE = 12 V 1.6 1.4 1.2 1 0.8 0.6 0.4 –60 1 QUADRANTS 2 3 –40 –20 0 20 40 60 80 100 120 140 QUADRANT 4 1 1 2 0.7 QUADRANT 3 4 0.5 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Normalized Gate Trigger Current I H , NORMALIZED HOLDING CURRENT (mA) 2 Figure 4. Normalized Gate Trigger Voltage GATE OPEN MAIN TERMINAL #1 POSITIVE 1 0.7 0.5 MAIN TERMINAL #2 POSITIVE 0.3 0.2 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Normalized Holding Current Motorola Thyristor Device Data 3 MAC218FP Series MAC218AFP Series PACKAGE DIMENSIONS –B– P –T– F N E C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500.


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