MAC321-10

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC321/D Triacs Silicon Bidirectional Thyristors . . . designed for full-wave ac control applications primarily in industrial environments needing noise immunity. Guaranteed High Commutation Voltage dv/dt — 500 V/µs Min @ TC = 25°C High Blocking Voltage — VDRM to 800 V Photo Glass Passivated Junction for Improved Power Cycling Capability and Reliability MAC321 Series TRIACs 20 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Open Gate) MAC321-4 MAC321-6 MAC321-8 MAC321-10 Peak Gate Voltage On-State Current RMS (TC = +75°C Full Cycle Sine Wave 50 to 60 Hz) Peak Surge Current (One Full Cycle, 60 Hz, T C = +75° C preceded and followed by Rated Current) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (T C = +75° C, Pulse Width = 2.0 µ s) Average Gate Power (T C = +75° C, t = 8.3 ms) Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM 200 400 600 800 VGM IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 10 20 150 93 20 0.5 2.0 –40 to +125 –40 to +150 Volts Amp Amp A2s Watts Watt Amp °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.8 Unit °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be...