Triac
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DCM/D
TRIACS
Silicon Bidirectional Thyristors
Desig...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DCM/D
TRIACS
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On–State Current Rating of 4.0 Amperes RMS at 108°C High Immunity to dv/dt — 500 V/ms at 125°C High Immunity to di/dt — 6.0 A/ms at 125°C
G ORDERING INFORMATION To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MAC4DCN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MAC4DCNT4 To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MAC4DCN–1 MT2
MAC4DCM MAC4DCN
Motorola Preferred Devices
TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS
MT2 MT1 MT1 MT2 G
CASE 369A–13 STYLE 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) Peak Non–Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 108°C) Average Gate Power (t = 8.3 msec, TC = 108°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 108°C) Peak Gate Voltage (Pulse Widt...
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