Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TRIACS
*Motorola preferred devices
MAC8 SERIES*
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 8.0 Amperes RMS at 100°C • Uniform Gate Trigger Currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating di/dt — 6.5 A/ms minimum at 125°C
MT2
TRIACS 8 AMPERES RMS 400 thru 800 VOLTS
MT1 MT2
G
CASE 221A-06 (TO-220AB) Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol VDRM Parameter Peak Repetitive Off-State Voltage (1) (– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC8D MAC8M MAC8N Value 400 600 800 8.0 80 26 16 0.35 – 40 to +125 – 40 to +150 A A A2sec Watts Watts °C °C Unit Volts
IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg
On-State RMS Current (60 Hz, TC = 100°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC RθJA TL Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 2.2 62.5 260 °C/W °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
3–45
MAC8 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25°C TJ = 125°C — — — — 0.01 2.0
ON CHARACTERISTICS
VTM IGT Peak On-State Voltage* (ITM = ± 11 A Peak) Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) Volts — 5.0 5.0 5.0 — — — 0.5 0.5 0.5 1.2 13 16 18 20 20 30 0.69 0.77 0.72 1.6 mA 35 35 35 mA 40 mA 50 80 Volts 1.5 1.5 1.5
IH IL
VGT
DYNAMIC CHARACTERISTICS
(di/dt)c Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) 6.5 CL = 10 µF LL = 40 mH 250 — — V/µs — — A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 125 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) 120 α = 120, 90, 60, 30° 115 α = 180° 110 DC 105 12 DC 10 180° 8 6 4 2 0 α = 30° 60° 90° 120°
100
0
1
3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMP)
2
7
8
0
1
2 3 4 5 6 IT(RMS), ON-STATE CURRENT (AMP)
7
8
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
3–46
Motorola Thyristor Device Data
MAC8 SERIES
100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1
TYPICAL AT TJ = 25°C MAXIMUM @ TJ = 125°C
0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
10
0.01
0.1
1
10
100 t, TIME (ms)
1000
1 · 104
Figure 4. Thermal Response
MAXIMUM @ TJ = 25°C 1
40 35 I H, HOLD CURRENT (mA) 30 MT2 POSITIVE 25 20 15 MT2 NEGATIVE 10
0.1
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
5
5 – 50
– 30
– 10
10 30 50 70 90 TJ, JUNCTION TEMPERATURE (°C)
110
130
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
100 Q2 Q3 Q1 10 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA)
1 – 50
– 30
– 10
30 70 10 50 90 TJ, JUNCTION TEMPERATURE (°C)
110
130
1 0.95 0.9 0.85 0.8 075 0.7 0.65 0.6 0.55 0.5 0.45 0.4 – 50
Q2 Q3
Q1
– 30
– 10
30 90 10 50 70 TJ, JUNCTION TEMPERATURE (°C)
110
130
Figure 6. Gate Trigger Current Variation Motorola Thyristor Device Data
Figure 7. Gate Trigger Voltage Variation 3–47
MAC8 SERIES
dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) 5000 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/µ s) 4.5K 4K 3.5K 3K 2.5K 2K 1.5K 1K 500 0 1 MT2 POSITIVE 10 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 1000 MT2 NEGATIVE 100
TJ = 125°C 10
100°C
75°C
tw VDRM
f=
1 2 tw
6f I (di/dt)c = TM 1000
1 10
15 20 25 30 35 40 45 50 55 60 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential)
Figure 9. Critical Rate of Rise of Commutating Voltage
LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL T.