PHD66NQ03LT

PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET Rev. 06 — 2 August 2004 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Low on-state resistance. 1.3 Applications s DC-to-DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 25 V s RDSon ≤ 10.5 mΩ s ID ≤ 66 A s Qgd = 3.6 nC (typ). 2. Pinning information Table 1: Discrete pinning Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline [1] mb mb 2 13 SOT404 (D2-PAK) 2 13 Top view SOT428 (D-PAK) [1] It is not possible to make a connection to pin 2 of the SOT404 and SOT428 packages. Symbol d g mbb076 s Philips Semiconductors PHB/PHD66NQ03LT N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PHB66NQ03LT D2-PAK Plastic single-ended surface mounted package (Philips version of D2-PAK); SOT404 3 leads (one lead cropped) PHD66NQ03LT D-PAK Plastic single-ended surface mounted package (Philips version of D-PAK); SOT428 3 leads (one lead cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) dra...