PHD9NQ20T

PHD9NQ20T N-channel TrenchMOS standard level FET Rev. 03 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC converters „ General purpose switching „ Motor control circuits „ Off-line switched-mode power supplies „ TV and computer monitor power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C Min Typ Max Unit - - 200 V - - 8.7 A - - 88 W VGS = 10 V; ID = 4.5 A; Tj = 25 °C - 300 400 mΩ VGS = 10 V; ID = 9 A; - 12 - nC VDS = 160 V; Tj = 25 °C NXP Semiconductors PHD9NQ20T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description Simplified outline G gate D drain[1] mb S source D mounting base; connecte...