PHI214-30EL

an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.-- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetalKeramic Package =..* C23.83) .820 37kC13 (9 53E.25) I Absolute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage ( Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Storage Temperature 1 Symbol V ES V,,, ‘t P TOT TJ T sic 1 Rating 56 3.0 3.0 50 200 -65 to +200 ( Unita V V A w “C “C UNLESS K’IERWISE NJTED, TDLER4N:ES CARE INCHES :H!LLIMETRS :.DDY -.!3MM) .375i.OlO :9.53=.2s 1 Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage at 25°C Symbol BV,,, ICES R nwC) P IN G, % Min 56 Max 3.0 1.5 4.9 Units V mA “C/W w dB % dB I,=60 mA V,,=28 V,,=28 V,,=28 V,,=28 .~ I’,,=28 V,,=28 V,,=28 v Test Conditions Collector-EmitterLeakageCurrent Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility V, PO,=30 W, F=l.20,1.30,1.40 GHz V, P,,,.=30 W, F=1.20, 1.30. 1.40 GHz V, P-=30 W, F=1.20, 1.30,1.40 GHz GHz GHz \ W, F=1.20, 1.30, 1.40 GHz 1.30,1.40 GHz 7.8 50 10 - 3:1 1.5:1 V. PO,,=30 W, F=l.20,1.30,1.40 V, PO,=30 W, F=l.20,1.30,1.40 V, PO,,.=30 RL VSWR-T VSWR-S VcC=28 V, P,,,-r=30 W, F-1....