*
z-,-3 y--z =: .---------= z =z = an AMP company
Wireless Bipolar Power Transistor, 1450 - 1550 MHz
Features
Designed...
*
z-,-3 y--z =: .---------= z =z = an AMP company
Wireless Bipolar Power
Transistor, 1450 - 1550 MHz
Features
Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Marching Diffused Emitter Ballasting ‘f
60W
PHI516160
.22st.010 C5.72t.25)
f .^^
/
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage CollectorCurrent Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance
Vcm VCES VEm 1, P, T, T srt 8JC (
65 65 3.0 10 116 200 -55 to +150
1.5
V V V ] A W “C “C
“CIW
UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES t.005 <,,,ILUnETERS r,13M,,,>
Electrical Characteristics
at 25°C
Typical Optimum Device Impedances
F(MHr) Z,(Q) 2.2 + j5.0 2.7+j4.5 2.1 + j3.7
1450
1500
1550
Wireless Bipolar Power
Transistor, 60W
PH1516-60
RF Test Fixture
vB
“cc
CR1
GD
INPUT 50 OHMS
DUTPUT 50 OHMS
ARTWORK
DIMENSIONS
IN
MILS
Cl c2 c3 c4 C5 C6
CR1 Ll Ql Rl RLl
18pF
ATC
SIZE
B CAPACITOR
CAPACITOR
5OOOpF CHIP CAPACITOR 50 VOLT 5OuF ELECTROLYTIC lN5417 7 TURNS PH1516-60 4.7 OHM 10 TURNS
DIODE
OF l/2 OF Nil. WATT ND 26
22 AWG CIN ,125' DIA
RESISTOR AWG IIN 3 = OHM 10.5
BUARD TYPE:
l/4 WATT RESISTOR ROGERS 601Os5 ,025"THICK,ER
Wireless Bipolar Power
Transistor,
60W
PH1516-60
v2.00
Typical Broadband Performance
Curves
GAIN-EFFICIENCY
11 ...
