MASWSS0033

GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz Preliminary Feb 12 2002 MASWSS0033 Features Low Harmonic Knee Voltage < 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.45 dB at 1 GHz High Isolation 18.5 dB at 2 GHz FQFP 12-lead 3x3mm Low Profile Package 0.5 micron GaAs pHEMT Process Functional Schematic GND ANT 100 pF PIN 1 V3 RF3 100 pF GND V1 RF1 100 pF Description M/A-COM’s MASWSS0033 is a GaAs PHEMT MMIC SP3T high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. This package represents a lower profile than standard FQFP style, featuring a 0.8mm maximum thickness. The MASWSS0033 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well othe handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. The MASWSS0033 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. GND GND GND RF2 100 pF Pin Configuration PIN No. 1 2 3 4 PIN Name V3 RF3 GND GND RF2 V2 GND RF1 V1 GND ANT GND GND (paddle) Description Control 3 RF Port 3 RF Ground RF Ground RF Port 2 Control 2 RF Ground RF Port 1 Control 1 RF Ground Antenna Port RF Grou...