PHL516-10

=_ F’E an AMP company Wireless Bipolar Power Transistor, 1.45 - 1.60 GHz Features l l l l l l 1OW PHl516-10 v2.00 IzS Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Absolute Maximum Ratings at 25°C UNLESS UTHERVISE NOTED, TOLERANCES ARE INCHES Transistor, 1 OW PH1516-10 v2.00 RF Test Fixture "cc GD Q C5 Q c3 El INPUT 50 OHMS 512 UUTPUT 50 OHMS ARTWORK DIMENSIONS IN MILS Cl c2 c4 C5 c3 33 pF...