Philips Semiconductors
Preliminary specification
PowerMOS transistors Low capacitance Avalanche energy rated
FEATURES
...
Philips Semiconductors
Preliminary specification
PowerMOS
transistors Low capacitance Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Low feedback capacitance Stable off-state characteristics High thermal cycling performance Low thermal resistance
PHP6NA60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 6.5 A RDS(ON) ≤ 1.2 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6NA60E is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 6.5 4.3 26 125 150 UNIT V V V A A A W ˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche en...