PHP83N03LT; PHB83N03LT; PHE83N03LT
N-channel TrenchMOS transistor
Rev. 01 — 23 January 2001 Product specification
1. Des...
PHP83N03LT; PHB83N03LT; PHE83N03LT
N-channel TrenchMOS
transistor
Rev. 01 — 23 January 2001 Product specification
1. Description
N-channel logic level field-effect power
transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP83N03LT in a SOT78 (TO-220AB) PHB83N03LT in a SOT404 (D2-PAK) PHE83N03LT in a SOT226 (I2-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g)
mb mb
Simplified outline
Symbol
drain (d) source (s) mounting base, connected to drain (d)
[1]
d
g
2 1
MBK106
1 2 3
MBK112
MBB076
s
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1] 1.
SOT404 (D2-PAK)
SOT226 (I2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package. TrenchMOS is a trademark of Royal Phillips Electronics.
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS
transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ − − − − 6.5 10 Max 25 75 115 175 9 12 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordanc...
